
( Brand: Kingston ), ( Manufacturer Part Number: KVR16S11S8 ), ( Model: KVR16S11S8/4 ), ( Bus Speed: Pc3-12800 ), ( Unit Type: Unit ), ( Capacity Per Module: 4 Gb ), ( Country/region Of Manufacture: China ), ( Memory Features: Non-ecc ), ( Number Of Pins: 240 ), ( Type: Ddr3 Sdram )
Experience enhanced system performance with the Kingston KVR16S11S8/4 4GB DDR4 SDRAM Memory Module. Designed with a focus on reliability, this memory module is an excellent choice for upgrading your computer's RAM.
The Kingston KVR16S11S8/4 DDR4 SDRAM operates at a speed of 2400MT/s, ensuring fast data transfer rates that help your system run smoothly, whether you're multitasking, gaming, or working on demanding applications. With a capacity of 4GB, this RAM module offers ample memory for a wide range of computing needs.
This memory module adheres to the standard DDR4 SDRAM form factor and is compatible with Intel X99, X299, and 200-series chipsets. It also supports non-ECC unbuffered memory configurations, making it an ideal upgrade for systems that require increased memory capacity without the expense of ECC memory.
The Kingston KVR16S11S8/4 DDR4 SDRAM Memory Module is built with high-quality components to ensure long-term reliability. It undergoes rigorous testing to verify its compatibility and performance, giving you peace of mind knowing that your upgrade is both reliable and effective.
In conclusion, the Kingston KVR16S11S8/4 4GB DDR4 SDRAM Memory Module is a high-performance, cost-effective solution for upgrading your system's memory. It provides the speed and reliability needed for demanding computing tasks, making it an excellent choice for gamers, professionals, and enthusiasts alike. Upgrade your system today and experience the difference that Kingston memory can make!
**Product Review: Kingston KVR16S11S8/4 4GB RAM SDRAM**
**Pros:**1. **Brand Reputation:** Kingston is a well-known and reliable brand in the memory module industry, ensuring quality and durability.
2. **Speed:** This RAM operates at a speed of 1600MHz, which is suitable for most mainstream systems and can provide decent performance for daily tasks.
3. **Energy Efficiency:** It uses low voltage DDR3 technology, resulting in less power consumption and lower heat production.
4. **XMP (Extreme Memory Profile) Technology:** This allows the RAM to run at its rated speed without needing manual overclocking, making it easier for beginners to install and use.
**Cons:**1. **Capacity:** With only 4GB, this RAM may not be sufficient for demanding tasks like heavy multitasking, gaming, or video editing, especially as system requirements continue to increase.
2. **Outdated Technology:** DDR3 is no longer the latest RAM technology. DDR4 is now more common and offers performance benefits. However, the price difference between DDR3 and DDR4 at the 4GB capacity is significant, making the Kingston RAM a more cost-effective choice for budget-conscious buyers.
**Conclusion:**The Kingston KVR16S11S8/4 4GB RAM SDRAM is a decent choice for budget-conscious buyers who need RAM for basic computing tasks. Its reliability, speed, and energy efficiency make it a good option, but its 4GB capacity may limit its usefulness for more demanding tasks. If you require more capacity or plan to upgrade to a more powerful system in the near future, you might want to consider a different RAM with a larger capacity or the latest DDR4 technology.
KVR16N11S8/44GB 1Rx8 512M x 64-Bit PC3-12800 CL11 240-Pin DIMM, This document describes Value RAMs 64-bit 4GB DDR3-1600 SDRAM Synchronous DRAM 1Rx8, memory module, based on eight 8-bit FBGA components. This 240-pin DIMM uses gold contact fingers. The SPD is programmed to JEDEC standard latency DDR3-1600 timing of 11-11-11 at 1.5V. The electrical and mechanical specifications are as follows: FEATURES JEDEC standard 1.5V Power Supply VDDQ 800MHz fuck for 1600Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 11, 10, 9, 8, 7, 6 Additive 0, CL - 2, or 1 clock 8-bit pre-fetch Burst length : Interleave without any limit, sequential with starting address only, 4 tact which does not allow seamless read write either on the fly using A12 MRS Bi-directional Differential Data Strobe Internal self calibration: Internal self calibration through ZQ pin RZQ: 240 ohm 1% On Die Termination ODT Average Refresh Period 7.8us at lower than TCASE 85 C, 3.9us C < TCASE, 4GB 1Rx8 512M x 64-Bit PC3-12800.