SAMSUNG M323R2GA3BB0-CQK0L Unbuff Ecc Memory PC5-38400 DDR5-4800 1RX8

( Brand: Samsung ), ( Manufacturer Part Number: M323R2GA3BB0-CQK0L ), ( Type: Server Memory )

Review SAMSUNG 16gb Unbuff Non Ecc Memory

Samsung M323R2GA3BB0-CQK0L 5200 MHz DDR5 1Rx8 Unbuffered ECC RAM - Powerful Performance and Reliable Data Integrity for Your PC

Experience the future of memory technology with the Samsung M323R2GA3BB0-CQK0L 5200 MHz DDR5 1Rx8 Unbuffered ECC RAM. Designed for high-performance computing, this DDR5 RAM module delivers a significant speed boost over its DDR4 counterparts, enabling faster data transfer rates, smoother multitasking, and enhanced system responsiveness.

The Samsung M323R2GA3BB0-CQK0L memory module boasts a speed of PC5-38400, translating to an effective data transfer rate of 5200 MHz, ensuring lightning-fast processing even for demanding applications. With a single rank (1Rx8) configuration, it provides the optimal balance between performance and cost, making it an ideal choice for gamers, content creators, and professionals who demand high-speed memory for their systems.

This DDR5 RAM module is equipped with Relaxed Timings-2 (RT2) technology, which provides greater flexibility in memory tuning, allowing users to fine-tune their system for optimal performance. The Unbuffered (UB) design ensures direct connection between the memory module and the memory controller, minimizing signal latency and improving overall system performance.

To further enhance system stability and data integrity, this Samsung DDR5 RAM module features Error Correcting Code (ECC) technology. ECC technology detects and corrects single-bit errors on-the-fly, ensuring reliable data transfer and minimizing the risk of data loss or corruption.

The Samsung M323R2GA3BB0-CQK0L 5200 MHz DDR5 1Rx8 Unbuffered ECC RAM is XMP 3.0 ready, allowing for easy overclocking without the need for manual configuration. With its sleek, low-profile design and compatibility with the latest Intel and AMD platforms, this RAM module is the perfect upgrade for your high-performance computing needs. Upgrade your system with the Samsung M323R2GA3BB0-CQK0L DDR5 RAM and experience the power and reliability of the future of memory technology today.

The Samsung M323R2GA3BB0-CQK0L PC5-38400 DDR5-4800 UDIMM Unbuffered ECC 1Rx8 RAM is a high-performance memory module designed for servers and workstations. Here are some pros and cons to consider before making a purchase:

1. High Speed: This RAM operates at a speed of DDR5-4800, which is faster than DDR4 RAMs and can significantly improve system performance.

2. ECC Support: Error-correcting code (ECC) memory can help prevent data corruption, which is essential for critical applications such as servers and workstations.

3. Reliable Brand: Samsung is a well-known brand with a reputation for producing high-quality components.

4. One Rank Module (1Rx8): This means that the RAM module has one rank, which can simplify system configuration and improve stability.

1. Expensive: DDR5 RAMs are generally more expensive than DDR4 RAMs, and this particular model is no exception.

2. Limited Compatibility: DDR5 RAM is not compatible with DDR4 motherboards, and only select motherboards support DDR5.

3. New Technology: DDR5 is a newer technology, and there may be some compatibility issues or bugs that have yet to be ironed out.

In conclusion, the Samsung M323R2GA3BB0-CQK0L PC5-38400 DDR5-4800 UDIMM Unbuffered ECC 1Rx8 memory is a high-performance RAM module best suited for servers and workstations that require fast data processing and error-free operations. However, it is relatively expensive and may have limited compatibility with existing systems. If you are building a new system and have a DDR5-compatible motherboard, this RAM could be a great choice. Otherwise, it may be more cost-effective to stick with DDR4 RAM for now.

Details:

Item Location: Los Angeles. Buyer pays shipping and handling. Pictures are for display purposes only, please see complete specifications. Item Information.

Or its subsidiaries in the USA and other countries. SAMSUNG 16GB PC5-38400 DDR5-4800 UNBUFF NON ECC 1RX8 MEMORY M323R2GA3BB0-CQK0L. $17.87 Ground Shipping for continental US.: SAMSUNG 16GB PC5-38400 DDR5-4800 UNBUFFERED NON ECC 1RX8 CL40 288 PIN 1.1V MEMORY MODULE PC5-4800 MANUFACTURER: SAMSUNG, PART NUMBER: M323R2GA3BB0-CQK0L, COMPONENT DENSITY: 16GB, PRODUCT BUS TYPE: SPEED: DDR5-48 SIGNAL UNBUFFERED, ERROR CORRECTION CODE: NO, RANK: 1RX8, CAS LATENCY: CL40, COUNT: 288-PIN, voltage .

part #: m323r2ga3bb0cqk0l prices

• $219.00-$480.58

specifications servermemor:

• brand: Samsung
• mpn: M323r2ga3bb0-cqk0l
• type: Server Memory

seller servermemor:

• city: Chatsworth, California
• # reviews: 10674
• rating: 100.0%

general servermemor:

• Enterprise Networking, Servers > Server Components > Server Memory RAM
• condition: Used

shipping servermemor:

• transit: 3-7 Days
• class: Standard
• cost: $17.87
• service: FedEx Ground / FedEx Home Delivery
• carrier: FedEx
• type: Fixed

returns servermemor:

• policy: Returns Accepted
• method: Money back
• paid by: Seller
• time: 30 Days

payments servermemor:

• wallet: Google-pay
• credit card: Diners-club
• other

offer servermemor:

• sold: 0
• quantity: 1
• availability: In Stock
• started: September 24, 2025
• options: Ship-to-home

Samsung M323R2GA3BB0-CQK0L Is Similar To:

• 0.09744922496769814 Samsung Ecc Reg Ram (23.9% similar) No other accessories hardware software. I'll get back to you as soon I can...(November 17th, 2018)
• 0.11338225633667265 Lot Samsung Ecc Server Ram Memory (30.5% similar) Condition: used, working if a power adapter is required for this item, it not included cord shows signs of normal use w some scuffs scratches blemishes sticker residue no other accessories hardware software. I'll get back to you as soon I can...(March 27th, 2018)
• 0.35100209741590715 Hp Samsung Ecc Reg (22.4% similar) I'll get back to you as soon I can. No other accessories hardware software...(October 12th, 2018)
• 0.3518165772947017 Samsung Cn Ram Ecc Reg Qty (27.6% similar) No other accessories hardware software. I'll get back to you as soon I can...(May 7th, 2018)
• 0.4190561585571104 Lot Samsung Ecc Server Ram (22.8% similar) Condition: used, working if a power adapter is required for this item, it not included cord shows signs of normal use w some scuffs scratches blemishes sticker residue no other accessories hardware software. I'll get back to you as soon I can...(October 13th, 2018)
• 0.4196896457027133 Samsung Ecc Reg Ram (24.1% similar) No other accessories hardware software. I'll get back to you as soon I can...(November 9th, 2018)
• 0.7823584412062607 Samsung Reg Ecc Ram Cn Qty (26% similar) I'll get back to you as soon I can. No other accessories hardware software...(June 19th, 2018)
• 0.850481806304197 Lot Samsung Hynix Server Ecc Ram (25% similar) Condition: used, working if a power adapter is required for this item, it not included cord shows signs of normal use w some scuffs scratches blemishes sticker residue no other accessories hardware software. I'll get back to you as soon I can...(October 16th, 2018)
• 0.9516050138760368 Samsung Registered Ecc Memory (33.3% similar) Condition: used, working if a power adapter is required for this item, it not included cord shows signs of normal use w some scuffs scratches blemishes sticker residue no other accessories hardware software. I'll get back to you as soon I can...(May 26th, 2018)
• 00lp726 Ibm Samsung Memory Cdimm Dram For (23.5% similar) Product quality conditions: all of our a mainly used refurbished item so its natural for an to have cosmetic wear and tear on them. Bubble wrap static-bag shipping packing: package star IBM 00LP726 32GB DDR3 1600MHZ memory M351B4G73DB0 comm dram for POWER8 part number Samsung brand power 8 ...(July 12th, 2018)
• 00v5404 Ibm Mmb Server Memory Samsung (29.6% similar) IBM part number: 00V5404 pulled from: 9117MM b server memory 8GB 1KX72 Samsung M396B1K73DH0-YF8M1 from a working environment average used cosmetic condition DOA warranty only what is pictured included. Don't see what you are looking for...(March 24th, 2018)