
( Brand: Nanya ), ( Manufacturer Part Number: NT1GT72U89D0BY-3C ), ( Type: Ddr2 Sdram ), ( Number Of Pins: 240 ), ( Capacity Per Module: 1gb ), ( Bus Speed: Pc2-5300 ), ( Form Factor: Dimm ), ( Memory Features: Ecc Memory ), ( Country/region Of Manufacture: Taiwan )
Experience enhanced computing performance with the Nanya NT1GT72U89D0BY-3C 1GB DDR2-667 SODIMM Memory Module. This high-quality memory module is designed to deliver reliable and efficient operation, making it an ideal choice for your PC upgrades.
The NT1GT72U89D0BY-3C DIMM memory module is manufactured by Nanya Technology Corporation, a renowned manufacturer of memory products. This memory module is equipped with 1 GB of capacity, which is sufficient for multitasking, running multiple applications, and managing large data sets.
The memory operates at a speed of DDR2-667, offering a data transfer rate of 667 MHz. It is compliant with PC2-5300 standards and features a CAS latency of 5 (CL5), ensuring quick and efficient data access. The memory also supports 9-9-9-24 timings and a 1.8V voltage supply, making it compatible with a wide range of systems.
The NT1GT72U89D0BY-3C memory module is a 128x8 ECC (Error-Correcting Code) DIMM, which helps to prevent data errors and ensure data integrity. This makes it an excellent choice for mission-critical applications, such as servers, workstations, and high-end gaming systems.
This memory module is a single-sided, non-buffered, unregistered SODIMM, making it easy to install in laptops and other compact systems. The NT1GT72U89D0BY-3C memory module is a reliable and efficient solution for upgrading your system's memory, providing a significant boost in performance and stability.
Upgrade your system with the Nanya NT1GT72U89D0BY-3C 1GB DDR2-667 DIMM SODIMM Memory Module and experience the difference in speed and efficiency.
Product: Nanya NT1GT72U89D0BY-3C DDR2 667 MHz 1 GB PC2-5300 CL5 9-9-9-24 128x8 ECC DDR2 SO-DIMM
Pros:1. ECC (Error Correcting Code) RAM: This type of RAM is designed to detect and correct single-bit errors, making it suitable for servers and systems that require high data integrity.
2. High speed: With a clock speed of 667 MHz, it offers decent performance for DDR2 RAM.
3. CL5 latency: Lower CAS latency means faster response times, improving system performance.
4. 128x8 bit bus: Wider buses allow for higher data transfer rates, potentially improving system performance.
Cons:1. Outdated technology: DDR2 RAM is significantly older than the current DDR4 technology, meaning it may not offer the same level of performance or compatibility with newer systems.
2. Lower capacity: 1 GB of RAM is relatively low for modern systems, which may require at least 4 GB or more.
3. Limited availability: DDR2 RAM is no longer commonly produced, which may make it harder to find and more expensive.
Conclusion:While the Nanya NT1GT72U89D0BY-3C offers some benefits such as ECC for data integrity and decent speed for DDR2 RAM, its outdated technology and relatively low capacity make it less suitable for modern systems. If you are building a server or require ECC RAM, this might be a viable option, but for general use, it's recommended to invest in DDR4 RAM for better performance and compatibility.
The dimm uses serial presence-detect implemented via a 2,048-bit prom using standard ii protocol. The remaining 128 bytes are available for use by customer long space-saving footprint. The use of these common design files minimizes electrical variation between suppliers.
The first 128 bytes of serial pd data are programmed and locked during module assembly. Prior to any access operation, the device latency and burst length operation type must be programmed into dimm by address inputs a0-a13 I o ba0, ba1 ba2 using mode register set cycle. All Nanya ddr2 sdram dims provide a high-performance, flexible 8-byte interface in 5.
Modules use nine 128mx8 ddr2 drams and eighteen in bag packages. Nt1gt72u89d0by nt2gt72u8pd0by 1gb: 128m x 72 2gb: 256m un buffered ddr2 sdram dimm with ecc 240Pin module based on 128mx8 d-die and are 240-pin double data rate 2 synchronous dram dual in-line memory dimm, organized as one rank 128mx72 two ranks 256mx72 high-speed array.